Silicon film forming method and substrate processing apparatus

ABSTRACT

There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Japanese Patent Application No.2018-038719, filed on Mar. 5, 2018, in the Japan Patent Office, thedisclosure of which is incorporated herein in its entirety by reference.

TECHNICAL FIELD

The present disclosure relates to a silicon film forming method and asubstrate processing apparatus.

BACKGROUND

Conventionally, there is known a method of supplying anaminosilane-based gas to a base to form a seed layer and supplying anamino group-free silane-based gas to the seed layer to form a siliconfilm, thereby reducing the thickness of the silicon film. In addition,there is also known a method of forming an amorphous silicon film on abase and then dry-etching the amorphous silicon film using Cl₂ gas toreduce the film thickness of the amorphous silicon film, therebyreducing the thickness of the amorphous silicon film and smoothing thesurface of the amorphous silicon film. In this method, it is possible toform a thin silicon film, which has good surface smoothness and has nopinhole.

However, with the methods described above, it is difficult to reduce thethickness of a silicon film to meet the needs of further film thicknessreduction.

SUMMARY

Some embodiments of the present disclosure provide a method capable offorming an ultra-thin silicon film, which has good surface smoothness.

According to one embodiment of the present disclosure, there is provideda method of forming a silicon film, the method including: a film formingstep of forming the silicon film on a base, the silicon film having afilm thickness thicker than a desired film thickness; and an etchingstep of reducing the film thickness of the silicon film by supplying anetching gas containing bromine or iodine to the silicon film.

According to another embodiment of the present disclosure, there isprovided a substrate processing apparatus including: a processingcontainer in which a substrate is accommodated; a gas supply partconfigured to introduce a film-forming gas and an etching gas into theprocessing container; and a controller configured to perform a controlsuch that a silicon film having a film thickness thicker than a desiredfilm thickness is formed on the substrate, and the etching gascontaining bromine or iodine is supplied onto the silicon film to reducethe film thickness of the silicon film.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the presentdisclosure, and together with the general description given above andthe detailed description of the embodiments given below, serve toexplain the principles of the present disclosure.

FIG. 1 is a cross-sectional view illustrating an example of a verticalheat treatment apparatus according to an embodiment of the presentdisclosure.

FIG. 2 is a view for explaining a processing container of the verticalheat treatment apparatus of FIG. 1.

FIG. 3 is a flowchart illustrating an example of a silicon film formingmethod according to an embodiment of the present disclosure.

FIGS. 4A to 4C are views for explaining a method of evaluating thepresence or absence of pinholes.

FIG. 5 is a view showing an SEM image on a surface of a silicon film.

FIG. 6 is a view showing an SEM image on the surface of the siliconfilm.

FIG. 7 is a view showing an SEM image on the surface of the siliconfilm.

FIG. 8 is a view showing an SEM image on the surface of the siliconfilm.

FIG. 9 is a diagram representing the relationship between a filmthickness of the silicon film and the number of pinholes.

FIGS. 10A and 10B are views illustrating a sectional shape of aline-and-space pattern, respectively.

FIG. 11 is a diagram representing a dependence of an etching rate of anetching gas on temperature in an a-Si film.

DETAILED DESCRIPTION

Hereinafter, embodiments for carrying out the present disclosure will bedescribed with reference to drawings. In the subject specification andthe drawings, components having substantially identical configurationswill be designated by like reference numerals with the duplicatedescriptions thereof omitted. In the following detailed description,numerous specific details are set forth in order to provide a thoroughunderstanding of the present disclosure. However, it will be apparent toone of ordinary skill in the art that the present disclosure may bepracticed without these specific details. In other instances, well-knownmethods, procedures, systems, and components have not been described indetail so as not to unnecessarily obscure aspects of the variousembodiments.

[Overall Configuration of Substrate Processing Apparatus]

A substrate processing apparatus capable of carrying out a silicon filmforming method according to an embodiment of the present disclosure willbe described by taking, as an example, a batch-type vertical heattreatment apparatus. FIG. 1 is a cross-sectional view illustrating anexample of a vertical heat treatment apparatus according to anembodiment of the present disclosure.

A substrate processing apparatus 1 includes a processing container 34configured to accommodate a semiconductor wafer (hereinafter referred toas a “wafer W”) as a substrate, a lid part 36 configured to hermeticallyclose an opening defined at a lower end of the processing container 34,a wafer boat 38 as a substrate holder received in the processingcontainer 34 and configured to hold a plurality of wafers W atpredetermined intervals, a gas supply part 40 configured to introduce apredetermined gas into the processing container 34, an exhaust part 40configured to exhaust gas from the processing container 34, and aheating part 42 configured to heat the wafer W.

The processing container 34 includes a cylindrical inner tube 44 havinga ceiling and an opened lower end portion, and a cylindrical outer tube46 having a ceiling and an opened lower end portion. The cylindricalouter tube 46 covers the outer side of the inner tube 44. The inner tube44 and the outer tube 46 are formed of a heat-resistant material such asquartz, and are arranged in a coaxial relationship with each other toform a double-tube structure.

A ceiling portion 44A of the inner tube 44 is, for example, flat. Anozzle accommodation portion 48 in which gas nozzles are accommodated isformed at one side of the inner tube 44 along the longitudinal direction(vertical direction). In the embodiment of the present disclosure, asillustrated in FIG. 2, a portion of a sidewall of the inner tube 44protrudes outward so as to form a convex portion 50. An interior of theconvex portion 50 is defined as the nozzle accommodation portion 48.

In addition, in a portion facing the nozzle accommodation portion 48 inthe sidewall of the inner tube 44, a rectangular opening 52 having awidth L1 is formed in the longitudinal direction (vertical direction).

The opening 52 functions as a gas exhaust port formed exhaust gas fromthe inner tube 44. In some embodiments, a vertical length of the opening52 is equal to a vertical of the wafer boat 38. Alternatively, thevertical length of the opening 52 may extend upwards and downwards inthe vertical direction to be longer than the vertical length of thewafer boat 38. That is to say, an upper end of the opening 52 extends toa height equal to or higher than a position corresponding to an upperend of the wafer boat 38, and a lower end of the opening 52 extends to aheight equal to or less than a position corresponding to a lower end ofthe wafer boat 38. Specifically, as illustrated in FIG. 1, a distance L2in the height direction between the upper end of the wafer boat 38 andthe upper end of the opening 52 falls within a range of about 0 mm to 5mm. A distance L3 in the height direction between the lower end of thewafer boat 38 and the lower end of the opening 52 falls within a rangeof about 0 mm to 350 mm.

The lower end of the processing container 34 is supported by acylindrical manifold 54 made of, for example, stainless steel. A flangeportion 56 is formed on an upper end of the manifold 54. The lower endportion of the outer tube 46 is installed on the flange portion 56 sothat the outer tube 46 is supported on the flange portion 56. A sealmember 58 such as an O-ring is interposed between the flange portion 56and the lower end portion of the outer tube 46 to hermetically seal theinterior of the outer tube 46.

A circular ring-shaped supporting portion 60 is formed on an upper innerwall of the manifold 54. The lower end portion of the inner tube 44 isinstalled on the supporting portion 60 so that the inner tube 44 issupported on the supporting portion 60. The lid part 36 is hermeticallyinstalled to an opening defined at a lower end of the manifold 54 via aseal member 62 such as an O-ring. Thus, the opening at the lower end ofthe processing container 34, namely the opening of the manifold 54, ishermetically sealed. The lid part 36 is formed of, for example,stainless steel.

A rotary shaft 66 is provided in the central portion of the lid part 36so as to penetrate through a magnetic fluid seal part 64. A lower end ofthe rotary shaft 66 is rotatably supported by an arm 68A of a lift part68 such as a boat elevator.

A rotary plate 70 is provided on an upper end of the rotary shaft 66.The wafer boat 38 that holds the wafers W is mounted on the rotary plate70 via a quartz heat-insulating base 72. With this configuration, bymoving the lift part 68 up and down, the lid part 36 and the wafer boat38 move vertically as a unit, so that the wafer boat 38 can be insertedinto and removed from the processing container 34.

The gas supply part 40 is provided in the manifold 54 and supplies gasessuch as a processing gas and a purge gas into the inner tube 44. The gassupply part 40 includes a plurality of (e.g., three) quartz-made gasnozzles 76, 78, and 80. Each of the gas nozzles 76, 78, 80 is installedinside the inner tube 44 in the longitudinal direction. A base end ofeach of the gas nozzles 76, 78, 80 is bent in an L shape and penetratesthrough the manifold 54 so that the gas nozzles 76, 78, 80 are supportedby the manifold 54.

As illustrated in FIG. 2, the gas nozzles 76, 78, and 80 are installedinside the nozzle accommodation portion 48 of the inner tube 44 in a rowalong the circumferential direction. A plurality of gas holes 76A, 78A,and 80A are formed in the respective gas nozzles 76, 78, and 80 atpredetermined intervals in the longitudinal direction. The respectivegases can be ejected horizontally from each of the plurality of gasholes 76A, 78A, and 80A. The predetermined intervals are set, forexample, to be equal to intervals of the wafers W supported by the waferboat 38. A position of each of the gas holes 76A, 78A, and 80A in theheight direction is set such that each of the gas holes 76A, 78A, and80A is located in the middle between two wafers W adjacent to each otherin the vertical direction. Thus, each gas can be efficiently supplied toa space defined between the respective two wafers W.

Various kinds of gases such as a film-forming gas, an etching gas, and apurge gas are used as the respective gases. These gases can be suppliedthrough the gas nozzles 76, 78, and 80, respectively, while controllingthe flow rates thereof as necessary.

The film-forming gas may be, for example, a silicon-containing gas. Forexample, aminosilane-based gases such as diisopropylaminosilane (DIPAS),tris(dimethylamino)silane (3DMAS), bis tertiary butylaminosilane (BTBAS)and the like, and amino group-free silane-based gases such as SiH₄(monosilane), Si₂H₆ (disilane), dichlorosilane (DCS), hexachlorodisilane(HCD) and the like, may be used as the silicon-containing gas.

The etching gas may be a gas containing bromine or iodine. As thebromine-containing gas, for example, Br₂ (bromine) and HBr (hydrogenbromide) may be used. As the iodine-containing gas, for example, I₂(iodine) and HI (hydrogen iodide) may be used.

The purge gas may be an inert gas. As the inert gas, for example, N₂(nitrogen) and Ar (argon) may be used.

A gas outlet 82 is formed in an upper sidewall of the manifold 54 abovethe supporting portion 60. The gas exhausted from the inner tube 44through the opening 52 is exhausted from the gas outlet 82 through aspace 84 between the inner tube 44 and the outer tube 46. An exhaustpart 41 is provided in the gas outlet 82. The exhaust part 41 includesan exhaust passage 86 connected to the gas outlet 82. A pressureregulation valve 88 and a vacuum pump 90 are sequentially provided inthe exhaust passage 86, so that the interior of the processing container34 can be evacuated.

The heating part 42 of a cylindrical shape is provided at the side of anouter periphery of the outer tube 46 so as to cover the outer tube 46.The heating part 42 heats the wafers W accommodated in the processingcontainer 34.

The entire operation of the substrate processing apparatus 1 configuredas above is controlled by a control part 110 such as a computer. Acomputer program that performs the entire operation of the substrateprocessing apparatus 1 is stored in a storage medium 112. The storagemedium 112 may be, for example, a flexible disk, a compact disk, a harddisk, a flash memory, or a DVD.

[Silicon Film Forming Method]

A silicon film forming method according to an embodiment of the presentdisclosure will be described. FIG. 3 is a flowchart illustrating anexample of the silicon film forming method according to the embodimentof the present disclosure.

The silicon film forming method according to the embodiment of thepresent disclosure includes a film forming step S1 of forming a siliconfilm having a film thickness thicker than a desired film thickness on abase, and an etching step S2 of supplying an etching gas containingbromine or iodine onto the silicon film to reduce the film thickness ofthe silicon film. In the embodiment of the present disclosure, first,the wafer boat 38 which holds a plurality of wafers W at a predeterminedinterval is loaded into the processing container 34. Subsequently, thefilm forming step S1 and the etching step S2 are successively performedinside the processing container 34 as a same processing chamber in avacuum atmosphere. Thus, the silicon film having a desired filmthickness is formed on each wafer W. In some embodiments, a purging stepof replacing the gas in the processing container 34 may be performedbetween the film forming step and the etching step. Subsequently, thewafer boat 38, which holds each wafer W on which the silicon film isformed, is unloaded from the processing container 34. The film formingstep S1 and the etching step S2 may be performed in different processingchambers.

The film forming step S1 is a step of forming a silicon film having afilm thickness thicker than a desired film thickness by supplying afilm-forming gas onto a base. The silicon film formed in the filmforming step S1 may be a silicon film having a thick thickness, in whichno pinhole is formed. The film thickness of the silicon film may beselected depending on film-forming conditions of the silicon film. Forexample, in a film-forming condition in which pinholes are formed in asilicon film when the film thickness is 25 Å or less, in the filmforming step S1, a silicon film having a film thickness thicker than 25Å may be formed on a base. As an example, a silicon film having a filmthickness of 30 Å, which is thicker by 5 Å, may be formed on the base.That is to say, a silicon film having a film thickness larger than apinhole limit by 5 Å or more may be formed.

The film forming step S1 may include, for example, a seed layer formingstep of forming a seed layer on the surface of the base by supplying anaminosilane-based gas to the base, and a silicon film forming step offorming a silicon film on the seed layer by supplying an aminogroup-free silane-based gas onto the seed layer. In some embodiments,another silicon film forming step of supplying a higher-ordersilane-based gas than the silane-based gas used in the silicon filmforming step onto the seed layer may be included between the seed layerforming step and the silicon film forming step. In some embodiments, apurging step of replacing the gas in the processing container 34 may beincluded between the respective steps.

The etching step S2 is a step of supplying an etching gas containingbromine or iodine onto a silicon film to reduce a film thickness of thesilicon film, thus adjusting the film thickness of the silicon film to adesired film thickness. At this time, the etching of the silicon filmusing the etching gas containing bromine or iodine becomes conformaletching without deteriorating the surface roughness of the silicon film.Thus, even if the silicon film has a concave-convex pattern having alarge surface area, the silicon film may be etched with enhancedcontrollability. From the viewpoint of productivity, it is desirable toperform the etching step S2 at a temperature higher than that in thefilm forming step S1.

The purging step is a step of replacing the gas in the processingcontainer 34. In the purging step, a purge gas is introduced into theprocessing container 34 from the gas nozzle 80 so that the film-forminggas and the etching gas remaining in the processing container 34 arereplaced with the purge gas.

As described above, the silicon film forming method according to theembodiment of the present disclosure includes forming the silicon filmhaving a film thickness thicker than a desired film thickness on thebase. This makes it possible to obtain a silicon film having fewerpinholes than those in the silicon film having a desired film thickness.Subsequently, the etching gas containing bromine or iodine is suppliedonto the silicon film to reduce the film thickness of the silicon film.Thus, the film thickness of the silicon film is adjusted to a desiredfilm thickness. It is therefore possible to perform conformal etchingwithout deteriorating the surface roughness of the silicon film. Even ifthe silicon film has a concave-convex pattern having a large surface, itis possible to etch the silicon film with enhanced controllability. As aresult, it is possible to form an ultra-thin silicon film which has goodsurface smoothness.

Example 1

Example 1, from which the action and effect of the silicon film formingmethod according to the embodiment of the present disclosure wasconfirmed, will be described.

<Sample>

A sample fabricated in Example 1 will be described.

(Samples 1A to 1F)

A silicon film having a thickness of 50 Å was formed on each of thesilicon substrates on each of which an oxide film is formed (in the filmforming step S1). Subsequently, the silicon film was etched-back (in theetching step S2). As a result, silicon films having film thicknesses of19 Å, 20 Å, 21 Å, 23 Å, 25 Å, and 26 Å were formed. The siliconsubstrates and the oxide films are examples of the base. The siliconfilm is an example of a film to be evaluated for the presence or absenceof pinholes. The silicon substrates having the silicon films having filmthicknesses of 19 Å, 20 Å, 21 Å, 23 Å, 25 Å, and 26 Å formed thereon arereferred to as Samples 1A, 1B, 1C, 1D, 1E, and 1F respectively. Processconditions used in the film forming step S1 and the etching step S2 areas follows.

<Film Forming Step S1 (Seed Layer Forming Step)>

Substrate temperature: 380 degrees C.

Internal pressure of processing container 34: 1.0 Torr (133.3 Pa)

Gas: DIPAS

<Film Forming Step S1 (Silicon Film Forming Step)>

Substrate temperature: 470 degrees C.

Internal pressure of processing container 34: 3.0 Torr (399.9 Pa)

GAS: DCS/SiH₄

<Etching Step S2>

Substrate temperature: 550 degrees C.

Internal pressure of processing container 34: 20 to 80 Torr (2.666 to10,666 Pa)

Gas: HBr

(Samples 2A to 2G)

Silicon films having film thicknesses of 25 Å, 27.7 Å, 33.7 Å, 34.8 Å,39.5 Å, 42.8 Å, and 54.7 Å were formed on silicon substrates each havingan oxide film formed thereon, respectively. The silicon substrateshaving the silicon films having film thicknesses of 25 Å, 27.7 Å, 33.7Å, 34.8 Å, 39.5 Å, 42.8 Å, and 54.7 Å formed thereon are referred to asSamples 2A, 2B, 2C, 2D, 2E, 2F, and 2G, respectively. Process conditionsused in the film forming step S1 were the same as those used in thesamples 1A to 1F1.

(Sample 3A)

Sample 3A was obtained by forming a silicon film having a film thicknessof 50 Å on a silicon substrate having an oxide film formed thereon (inthe film forming step S1), and etching back the silicon film to have afilm thickness of 15 Å (in the etching step S2). Process conditions usedin the film forming step S1 and the etching step S2 were as follows.

<Film Forming Step S1 (Seed Layer Forming Step)>

Substrate temperature: 380 degrees C.

Internal pressure of processing container 34: 1.0 Torr (133.3 Pa)

Gas: DIPAS

<Film Forming Step S1 (Another Silicon Film Forming Step)>

Substrate temperature: 380 degrees C.

Internal pressure of processing container 34: 1.0 Torr (133.3 Pa)

Gas: Si₂H₆

<Film Forming Step S (Silicon Film Forming Step)>

Substrate temperature: 470 degrees C.

Internal pressure of processing container 34: 3.0 Torr (399.9 Pa)

GAS: DCS/SiH₄

<Etching Step S2>

Substrate temperature: 550 degrees C.

Internal pressure of processing container 34: 20 to 80 Torr (2,666 to10,666 Pa)

Gas: HBr

(Sample 4A)

Sample 4A was obtained by forming a silicon film having a film thicknessof 15 Å on a silicon substrate having an oxide film formed thereon.Process conditions used in the film forming step S1 were the same asthose used in Sample 3A.

<Evaluation Method>

A method of evaluating the presence or absence of pinholes on thesurface of the silicon film will be described. FIGS. 4A to 4C are viewsfor explaining the method of evaluating the presence or absence ofpinholes. FIG. 4A shows a schematic cross section of a sample in whichan oxide film and a silicon film are formed on a silicon substrate, anda surface image obtained by a Scanning Electron Microscope (SEM). FIG.4B shows a schematic cross section of a sample obtained by immersing thesample of FIG. 4A in diluted hydrofluoric acid (DHF) of 0.5 wt % for 10minutes and a surface image obtained by SEM. FIG. 4C shows a schematiccross section of a sample obtained by immersing the sample of FIG. 4B intetramethylammonium hydroxide (TMAH) of 2.5% whose temperature wasadjusted to 33 degrees C. and a surface image obtained by SEM.

First, as illustrated in FIG. 4A, Samples 1A to 1F, Samples 2A to 2G,Sample 3A, and Sample 4A, in each of which an oxide film 202 and asilicon film 203 is formed on a silicon substrate 201, are prepared. Atthis time, as illustrated in FIG. 4A, even if a pinhole 204 is generatedin the silicon film 203, since the size of the pinhole 204 is quitesmall, it is difficult to evaluate the presence or absence of thepinhole 204 using the surface image obtained by SEM.

Subsequently, as illustrated in FIG. 4B, the silicon substrate 201 isimmersed in DHF of 0.5 wt % for 10 minutes. The DHF hardly etches thesilicon film but has the property of etching the oxide film. Thus, thesilicon film 203 functions as an etching mask. A portion of the oxidefilm 202 is etched through the pinhole 204 formed in the silicon film203. As a result, a recess 205 having a larger diameter than that of thepinhole 204 generated in the silicon film 203 in plan view is formed inthe surface of the oxide film 202.

Subsequently, as shown in FIG. 4C, the silicon substrate 201 wasimmersed in TMAH of 2.5% whose temperature is adjusted to 33 degrees C.The TMAH has a high selectivity of silicon film to oxide film. Thus, thesilicon film 203 is etched away and the oxide film 202 remains. As aresult, the oxide film 202, which has the recess 205 formed at aposition corresponding to the pinhole 204 formed in the silicon film203, is exposed on the surface.

Thereafter, the surface of the sample of FIG. 4C is observed with SEM toobtain a SEM-based surface image. In addition, pinholes on the SEM-basedsurface image are detected by an image analysis software to measure thenumber of pinholes. Various software may be used as the image analysissoftware. This makes it possible to clearly confirm the presence orabsence of pinholes and the number of pinholes.

[Evaluation Result 1]

For each of Sample 1B and Sample 2A, the presence or absence of pinholeson the surface of the silicon film was evaluated by the aforementionedevaluation method. FIGS. 5 and 6 are views showing SEM-based surfaceimages of oxide films in Sample 1B and Sample 2A, respectively.

Pinholes were not generated in Sample 1B (see FIG. 5), whereas a largenumber of pinholes were generated in Sample 2A (see FIG. 6). From theseresults, it is considered that by performing the etching step S2 afterthe film forming step S1, it is possible to prevent the generation ofpinholes on the surface of the silicon film and to form an ultra-thinsilicon film having good surface smoothness.

[Evaluation Result 2]

For each of Sample 3A and Sample 4A, the presence or absence of pinholeson the surface of the silicon film was evaluated by the aforementionedevaluation method. FIGS. 7 and 8 are views showing SEM-based surfaceimages of oxide films in Sample 3A and Sample 4A, respectively.

Pinholes were not generated in Sample 3A (see FIG. 7), whereas a largenumber of pinholes were generated in Sample 4A (see FIG. 8). From theseresults, it is considered that by performing the etching step S2 afterthe film forming step S1, it is possible to prevent the generation ofpinholes on the surface of the silicon film and to form a ultra-thinsilicon film having the good surface smoothness.

[Evaluation Result 3]

For each of Samples 1A to 1F and Samples 2A to 2G, the number ofpinholes on the surface of the silicon film was evaluated by theaforementioned evaluation method. FIG. 9 is a diagram representing therelationship between a film thickness of the silicon film and the numberof pinholes in the silicon film. In FIG. 9, the horizontal axisrepresents the film thickness (A) of the silicon film, and the verticalaxis represents the number of pinholes (EA) on the surface of thesilicon film (an observation area: about 1.2 μm×0.9 μm). In addition, inFIG. 9, circles indicate Samples 1A to 1F. and triangles indicateSamples 2A to 2G.

In Samples 1A to 1F indicated by the circles in FIG. 9, in the case ofthe film thickness of 19 Å, one pinhole was generated. In the case ofthe film thicknesses of 20 Å, 21 Å, 23 Å, 25 Å, and 26 Å, no pinhole wasgenerated. Meanwhile, in Samples 2A to 2G indicated by the triangles inFIG. 9, in the case of the film thicknesses of 34.8 Å, 39.5 Å, 42.8 Å,and 54.7 Å, no pinhole was generated. In the case of the filmthicknesses of 25 Å, 27.7 Å, and 33.7 Å, 410 pinholes, 224 pinholes, and9 pinholes were generated, respectively. From these results, it isconsidered that by performing the etching step S2 after the film formingstep S1, it is possible to prevent the generation of pinholes on thesurface of the silicon film and to form an ultra-thin silicon filmhaving good surface smoothness.

Example 2

In Example 2, a cross-section shape and surface shape of a silicon filmobtained when using HBr, which is an example of the etching gas, wereevaluated using SEM and an Atomic Force Microscope (AFM). Forcomparison, a cross-sectional shape and surface shape of a silicon filmobtained using chlorine (Cl₂) as an etching gas were also evaluated inthe same manner.

First, a silicon oxide film was formed in conformity to a concave-convexshape of a silicon substrate having a line-and-space (L&S) patternformed thereon. Subsequently, a first seed layer was formed by supplyingDIPAS as an aminosilane-based gas onto the silicon oxide film. A secondseed layer was formed by supplying Si₂H₆ onto the first seed layer.Subsequently, an amorphous silicon (a-Si) film was formed in conformityto the L&S pattern by supplying SiH₄ onto the second seed layer.Subsequently, the film thickness of the a-Si film was reduced bysupplying Cl₂ or HBr as an etching gas onto the a-Si film. The totalthickness of the first seed layer, the second seed layer, and the a-Sifilm was about 25 nm. In the etching using Cl₂, the internal pressure ofthe processing container 34 was set to 3.0 Torr (399.9 Pa) and thesubstrate temperature was set to 325 degrees C. In the etching usingHBr, the internal pressure of the processing container 34 was set to 20Torr (2,666 Pa) and the substrate temperature was set to 550 degrees C.

Next, the cross-sectional shapes of the prepared samples were evaluatedusing SEM.

FIGS. 10A and 10B illustrate cross-sectional shapes of the L&S pattern.FIG. 10A illustrates the cross-sectional shape of a sample obtained byetching an a-Si film using HBr, and FIG. 10B illustrates thecross-sectional shape of a sample obtained by etching the a-Si filmusing Cl₂. Since the silicon oxide film formed between the siliconsubstrate and the a-Si film is extremely thin relative to the a-Si film,it was impossible to confirm the silicon oxide film in FIGS. 10A and10B.

As illustrated in FIG. 10A, it can be seen that, when the a-Si film wasetched using HBr, the a-Si film formed in conformity to the L&S patternof the silicon substrate was etched in a conformal manner. In otherwords, it can be seen that a film thickness Ttop of an a-Si filmremaining on an upper sidewall of each line in the L&S pattern and afilm thickness Tbtm of the a-Si film remaining on a lower sidewall ofeach line in the L&S pattern are substantially equal to each other, andthus the sectional shape of each space in the L&S pattern issubstantially a U-formation.

Meanwhile, as illustrated in FIG. 10B, it can be seen that, when thea-Si film was etched using Cl₂, the a-Si film formed in conformity tothe L&S pattern of the silicon substrate was more etched on the uppersidewall of each line of the L&S pattern than on the lower sidewall ofeach line in the L&S pattern. In other words, it can be seen that thefilm thickness Ttop of the a-Si film remaining on the upper sidewall ofeach line in the L&S pattern becomes smaller than the film thicknessTbtm of the a-Si film remaining on the lower sidewall of each line inthe L&S pattern, and thus the sectional shape of each space in the L&Spattern are substantially a V-formation.

From the foregoing, it can be said that by etching the a-Si film usingHBr, it is possible to etch the a-Si film formed in conformity to theconcave-convex shape in a conformal manner.

Subsequently, the surface shapes of the prepared samples were evaluatedusing AFM.

As a result of the AFM-based evaluation, a surface roughness Ra of eachline in the L&S pattern before etching the a-Si film was 0.289. Inaddition, when the a-Si film was etched using HBr, the surface roughnessRa of each line in the L&S pattern was 0.244. Thus, a surface smootherthan that before etching the a-Si film was obtained. Meanwhile, when thea-Si film was etched using Cl₂, the surface roughness Ra of each line inthe L&S pattern was 0.342, which becomes larger than that before etchingthe a-Si film.

From the foregoing, it can be said that, by etching the a-Si film usingHBr, it is possible to form an a-Si film having good surface smoothness,

Example 3

In Example 3, a dependence of an etching rate of HBr used as an exampleof etching gas on temperature in an a-Si film was evaluated. Forcomparison, the dependence of the etching rate on temperature when thea-Si film was etched using Cl₂ was also evaluated.

FIG. 11 is a diagram representing a dependence of an etching rate of anetching gas on temperature in an a-Si film. In FIG. 11, the horizontalaxis represents the etching temperature (degree C.), and the verticalaxis represents the etching rate (Å/min). In addition, in FIG. 11, thefilm-forming temperature range of a general a-Si film is represented asa range enclosed by a broken line.

As represented in FIG. 11, in the case of using HBr as an etching gas,it is possible to etch the a-Si film at a temperature substantiallyequal to or slightly higher than the film-forming temperature of thea-Si film after forming the a-Si film at a generally-used temperature(e.g., 380 degrees C. to 530 degrees C.). Therefore, it takes littletime in stabilizing the temperature before etching the a-Si film.

Meanwhile, in the case of using Cl₂ as an etching gas, when etching isperformed after forming the a-Si film at the generally-used temperature,it is necessary to lower the temperature to a temperature at which thefilm thickness of the a-Si film is capable of being controlled (e.g.,350 degrees C. or less) after the formation of the a-Si film. Therefore,the time required for stabilizing the temperature before etching thea-Si film is prolonged.

From the foregoing, in the case of etching the a-Si film, by using HBras the etching gas, it is possible to shorten the time required forstabilizing the temperature before etching the a-Si film and to improvethe productivity.

Although some embodiments for carrying out the present disclosure havebeen described above, the above contents do not limit the contents ofthe present disclosure, and various modifications and improvements arepossible within the scope of the present disclosure.

According to the present disclosure in some embodiments, it is possibleto form an ultra-thin silicon film having good surface smoothness.

In the embodiments described above, a batch-type vertical heat treatmentapparatus, which performs processing on a plurality of wafers at a time,has been described as an example of a substrate processing apparatus,but the present disclosure is not limited thereto. For example, thesubstrate processing apparatus may be a single wafer type apparatus,which processes wafers one by one. In some embodiments, for example, thesubstrate processing apparatus may be a semi-batch type apparatus, whichrevolves a plurality of wafers arranged on a rotary table inside aprocessing container by the rotary table and causes the wafers tosequentially pass through a region to which a source gas is supplied anda region to which a reaction gas reacting with the source gas issupplied, thus forming a film on the surface of each wafer.

What is claimed is:
 1. A method of forming a silicon film, the methodcomprising: a film forming step of forming the silicon film on a base,the silicon film having a film thickness thicker than a desired filmthickness; and an etching step of reducing the film thickness of thesilicon film by supplying an etching gas containing bromine or iodine tothe silicon film, wherein concave-convex portions are formed in asurface of the base, wherein the etching step includes etching thesilicon film formed on the concave-convex portions of the base in aconformal manner, wherein the film forming step and the etching step aresuccessively performed in a same processing chamber, wherein the etchingstep is performed at a temperature higher than a temperature in the filmforming step, and wherein, in the etching step, the temperature is equalto or higher than 550 degrees C.
 2. The method of claim 1, wherein thefilm thickness of the silicon film is a film thickness at which nopinhole is generated.
 3. The method of claim 1, wherein the film formingstep includes forming the silicon film on the concave-convex portions ofthe base in a conformal manner.
 4. The method of claim 1, wherein theetching gas is at least one selected from a group consisting of a Br2gas, an HBr gas, an I2 gas, and an HI gas.
 5. The method of claim 1,wherein a surface roughness of the silicon film decreases in the etchingstep.
 6. The method of claim 1, wherein the film forming step includes:a seed layer forming step of forming a seed layer on a surface of thebase by supplying an aminosilane-based gas onto the base; and a firstsilicon film forming step of forming another silicon film on the seedlayer by supplying an amino group-free silane-based gas onto the seedlayer.
 7. The method of claim 6, further comprising: a second siliconfilm forming step of supplying a higher-order silane-based gas than theamino group-free silane-based gas used in the first silicon film formingstep to the seed layer between the seed layer forming step and the firstsilicon film forming step.
 8. A substrate processing apparatuscomprising: a processing container in which a substrate is accommodated;a gas supply part configured to introduce a film-forming gas and anetching gas into the processing container; and a controller configuredto perform a control such that a silicon film having a film thicknessthicker than a desired film thickness is formed on the substrate, andthe etching gas containing bromine or iodine is supplied onto thesilicon film to reduce the film thickness of the silicon film, whereinconcave-convex portions are formed in a surface of the substrate,wherein the silicon film formed on the concave-convex portions of thesubstrate is etched in a conformal manner, wherein a film forming stepin which the silicon film is formed and an etching step in which theetching gas is supplied are successively performed in a same processingchamber, wherein the etching step is performed at a temperature higherthan a temperature in the film forming step, and wherein, in the etchingstep, the temperature is equal to or higher than 550 degrees C.